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2SC3356-T1B-R25-A

Transistors - FETs, MOSFETs - RF

Manufacturer No:
2SC3356-T1B-R25-A
Manufacture:
CEL
Datasheet:
2SC3356-T1B-R25-A
Description:
SAME AS NE85633 NPN SILICON AMPL

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0 pcs On sales

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Product Attribute

CEL 2SC3356-T1B-R25-A technical specifications, attributes, parameters and parts with similar specifications to CEL 2SC3356-T1B-R25-A.

Categories
Discrete Semiconductor Products
Manufacturer
CEL
Packaging
Reel package
Part Status
Obsolete(EOL)
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Maximum)
12V
Frequency - Transition
7GHz
Noise Figure (dB Typ @ f)
1.1dB @ 1GHz
Gain
11.5dB
Power - Max
200mW
DC Current Gain (hFE) (Minimum) @ Ic, Vce
50 @ 20mA, 10V
Current - Collector (Ic) (Maximum)
100mA
Operating Temperature Range
150°C (TJ)
Mounting
SMD
Package
TO-236-3, SC-59, SOT-23-3
Manufacturer Package
SOT-23-3
Popularity
Medium
Fake Threat In the Open Market
71 pct.
Supply and Demand Status
Sufficient
Family Name
2SC3356
Introduction Date
March 23, 1997
Estimated EOL Date
Obsolete

Company Profile

We are the professional distributor of electronic components providing a large variety of products to save you a lot of time, effort and cost with our efficient self-customized service. careful order preparation fast delivery service. Powerful enterprise management system, warehouse management system, strict product quality inspection system and convenient delivery system are suitable for each terminal PC/mobile platform.

2SC3356-T1B-R25-A Relevant information

2SC3000
2SC3000

HF Amp Applications 

2SC3011
2SC3011

TRANSISTOR (UHF~C BAND LOW NOISE AMPLIFIER APPLICATIONS)

2SC3018
2SC3018

NPN EPITAXIAL PLANAR TYPE

2SC3019
2SC3019

NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)

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