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2SC4227-T1-R34-A

RF Transistors (BJT)

Manufacturer No:
2SC4227-T1-R34-A
Manufacture:
CEL
Datasheet:
2SC4227-T1-R34-A
Description:
SAME AS NE68130 NPN SILICON AMPL

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0 pcs On sales

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Product Attribute

CEL 2SC4227-T1-R34-A technical specifications, attributes, parameters and parts with similar specifications to CEL 2SC4227-T1-R34-A.

Categories
Discrete Semiconductor Products
Manufacturer
CEL
Packaging
Reel - TR
Status
Obsolete(EOL)
Transistor Polarity
NPN
VCEO Maximum Collector-Emitter Breakdown Voltage
10V
Frequency - Transition
7GHz
Noise Figure (dB Typ @ f)
1.4dB @ 1GHz
Gain
12dB
Maximum Power Dissipation
150mW
Typical Gain (hFE) (Min)
40 @ 7mA, 3V
Maximum Current Collector
65mA
Temperature Range - Operating
150°C (TJ)
Mounting
SMD (SMT)
Case / Package
SOT-323
Popularity
Medium
Fake Threat In the Open Market
38 pct.
Supply and Demand Status
Balance

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2SC4227-T1-R34-A Relevant information

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2SC4001

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2SC4002E-AA
2SC4002E-AA

Trans GP BJT NPN 400V 0.2A 600mW 3-Pin NP

2SC4003
2SC4003

Trans GP BJT NPN 400V 0.2A 1000mW 3-Pin(3+Tab) TP

2SC4003E
2SC4003E

Trans GP BJT NPN 400V 0.2A 1000mW 3-Pin(3+Tab) TP

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