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EM Microelectronic V3021SO8B technical specifications, attributes, parameters and parts with similar specifications to EM Microelectronic V3021SO8B.
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.526 V at IF = 5 A
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.526 V at IF = 5 A
RTC, LOW POWER, 1-BIT I/F, 32KHZ
ULTRA LOW POWER 1-BIT 32KHZ RTC,
Ultra Low Power 1-Bit 32 kHz RTC