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BD239BTU

RF Transistors (BJT)

Manufacturer No:
BD239BTU
Manufacture:
Fairchild/ON Semiconductor
Package:
TO-220-3
Datasheet:
BD239BTU
Description:
TRANS NPN 80V 2A TO220-3 / Bipolar (BJT) Transistor NPN 80 V 2 A 30 W Through Hole TO-220-3

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Product Attribute

Fairchild/ON Semiconductor BD239BTU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BD239BTU.

Category
Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr
Fairchild Semiconductor
Package
Bulk
Transistor Type
NPN
Current - Collector (Ic) (Max)
2 A
Voltage - Collector Emitter Breakdown (Max)
80 V
Vce Saturation (Max) @ Ib, Ic
700mV @ 200mA, 1A
Current - Collector Cutoff (Max)
300µA
DC Current Gain (hFE) (Min) @ Ic, Vce
15 @ 1A, 4V
Power - Max
30 W
Temperature Range - Operating
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Base Product Number
BD239
MSL Level
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
0000.00.0000
Other Names
FAIFSCBD239BTU,2156-BD239BTU
Standard Package
1
Fake Threat In the Open Market
57 pct.

Company Profile

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