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Infineon Technologies BAR88-02V H6327 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BAR88-02V H6327.
Silicon RF Switching Diode (Design for use in shunt configuration Hight shunt signal isolation Low shunt insertion loss)
SILICON RF SWITCHING DIODE
DIODE RF SW 30V 100MA SOT343
Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss)
PIN Diode Switch 30V 100mA 4-Pin(3+Tab) SOT-343 T/R