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Infineon Technologies BAR8802VH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BAR8802VH6327XTSA1.
Silicon RF Switching Diode (Design for use in shunt configuration Hight shunt signal isolation Low shunt insertion loss)
SILICON RF SWITCHING DIODE
DIODE RF SW 30V 100MA SOT343
Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss)
PIN Diode Switch 30V 100mA 4-Pin(3+Tab) SOT-343 T/R