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BCR191WH6327XTSA1

RF Transistors (BJT)

Manufacturer No:
BCR191WH6327XTSA1
Manufacture:
Infineon Technologies
Package:
SC-70, SOT-323
Datasheet:
BCR191WH6327XTSA1
Description:
TRANS PREBIAS PNP 250MW SOT323-3 / Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 250 mW Surface Mount PG-SOT323

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Delivery Time
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

Infineon Technologies BCR191WH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BCR191WH6327XTSA1.

Category
Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Mfr
Infineon Technologies
Package
Tape & Reel (TR)
Product Status
Not For New Designs
Transistor Type
PNP - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
22 kOhms
Resistor - Emitter Base (R2)
22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)
100nA (ICBO)
Frequency - Transition
200 MHz
Power - Max
250 mW
Mounting
SMD (SMT)
Package / Case
SC-70, SOT-323
Supplier Device Package
PG-SOT323
Base Product Number
BCR191
MSL Level
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0075
Other Names
IFEINFBCR191WH6327XTSA1,BCR 191W H6327,2156-BCR191WH6327XTSA1-ITTR,BCR 191W H6327-ND,BCR191WH6327XTSA1TR,SP000757896
Standard Package
3,000
Fake Threat In the Open Market
56 pct.

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