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Infineon Technologies IPB65R045C7 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPB65R045C7.
OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
MOSFET N-CH 250V 25A D2PAK / N-Channel 250 V 25A (Tc) 136W (Tc) Surface Mount PG-TO263-3
MOSFET N-CH 650V 50A TO263-3 / N-Channel 650 V 50A (Tc) 227W (Tc) Surface Mount PG-TO263-3
MOSFET N-CH 600V 61A TO263-3-2 / N-Channel 600 V 61A (Tc) 201W (Tc) Surface Mount PG-TO263-3-2
MOSFET N-CH 650V 35A TO263-3 / N-Channel 650 V 35A (Tc) 162W (Tc) Surface Mount D2PAK (TO-263)
MOSFET N-CH 650V 48A D2PAK / N-Channel 650 V 48A (Tc) 164W (Tc) Surface Mount PG-TO263-3