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IPL65R195C7AUMA1

Name: IPL65R195C7AUMA1
Brand: Infineon Technologies
Price: 1.5 USD
Rating: 4.8 (6586 reviews)

PMIC - Power Management - Specialized

Manufacturer No:: IPL65R195C7AUMA1
Manufacture:: Infineon Technologies
Package:: 4-PowerTSFN
Datasheet:: IPL65R195C7AUMA1
Description:: MOSFET N-CH 650V 12A 4VSON / N-Channel 650 V 12A (Tc) 75W (Tc) Surface Mount PG-VSON-4

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

Infineon Technologies IPL65R195C7AUMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPL65R195C7AUMA1.

Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr: Infineon Technologies
Series: CoolMOS™ C7
Package: Tape & Reel
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 195mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id: 4V @ 290µA
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 400 V
Power Dissipation (Max): 75W (Tc)
Temperature Range - Operating: -40°C ~ 150°C (TJ)
Mounting: SMD (SMT)
Supplier Device Package: PG-VSON-4
Package / Case: 4-PowerTSFN
Base Product Number: IPL65R
MSL Level: 2A (4 Weeks)
REACH Status: REACH Unaffected
ECCN: EAR99
HTSUS: 8541.29.0095
Other Names: IPL65R195C7AUMA1-ND,INFINFIPL65R195C7AUMA1,448-IPL65R195C7AUMA1DKR,2156-IPL65R195C7AUMA1,SP001032726,448-IPL65R195C7AUMA1CT,448-IPL65R195C7AUMA1TR
Standard Package: 3,000
Fake Threat In the Open Market: 85 pct.

Company Profile

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