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IRF7807VD2TRPBF

Name: IRF7807VD2TRPBF
Brand: Infineon Technologies
Price: 1.31 USD
Rating: 4.8 (6586 reviews)

Electronic Surplus

Manufacturer No:: IRF7807VD2TRPBF
Manufacture:: Infineon Technologies
Datasheet:: IRF7807VD2TRPBF
Description:: Co-Pack N-channel HEXFET® Power MOSFET and Schottky Diode | MOSFET N-CH 30V 8.3A 8-SOIC

In Stock

21000 pcs On sales

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Shipping Method

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

Infineon Technologies IRF7807VD2TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7807VD2TRPBF.

Categories: Discrete Semiconductor Products
Manufacturer: Infineon Technologies
Packaging: Reel
Status: Obsolete
Transistor Polarity: N-Channel
Technology: MOSFET
Vds - Drain-Source Breakdown Voltage: 30V
Supply and Demand Status: Limited
Fake Threat In the Open Market: 53 pct.
Popularity: Medium
Manufacturer Homepage: www.irf.com
MSL Level: 1 (Unlimited)
Manufacturer Pack Quantity: 1
Manufacturer Package: 8-SOIC
Supplier Device Package: 8-SO
Mounting Style: SMD
Temperature Range - Operating: -55°C ~ 150°C
Power Dissipation (Maximum): 2.5W
FET Feature: Schottky Diode (Isolated)
Gate Source Voltage (Maximum): ±20V
Gate Charge (Qg) (Maximum) at Vgs: 14nC at 4.5V
Gate Source Voltage(th) (Maximum) at Id: 1V at 250μA
Rds On (Maximum) at Id, Vgs: 25mOhm at 7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Id - Continuous Drain Current: 8.3A

Company Profile

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