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IRF9910PBF

FETs - Arrays

Manufacturer No:
IRF9910PBF
Manufacture:
Infineon Technologies
Datasheet:
IRF9910PBF
Description:
HEXFET®Power MOSFET | MOSFET 2N-CH 20V 10A/12A 8-SOIC

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0 pcs On sales

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Shipping Method
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Delivery Time
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

Infineon Technologies IRF9910PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF9910PBF.

Categories
Discrete Semiconductor Products
Manufacturer
Infineon Technologies
Packaging
Tube
Transistor Polarity
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Vds - Drain-Source Breakdown Voltage
20V
Id - Continuous Drain Current
10A, 12A
Rds On (Maximum) at Id, Vgs
13.4mOhm at 10A, 10V
Gate Source Voltage(th) (Maximum) at Id
2.55V at 250μA
Gate Charge (Qg) (Maximum) at Vgs
11nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds
900pF at 10V
Maximum Power
2W
Temperature Range - Operating
-55°C ~ 150°C
Mounting Style
SMD
Manufacturer Package
8-SOIC
Supplier Device Package
8-SO
Family Part Number
IRF9910PBF
Manufacturer Pack Quantity
3,800
MSL Level
1 (Unlimited)
Manufacturer Homepage
www.irf.com
Popularity
Medium
Fake Threat In the Open Market
60 pct.
Supply and Demand Status
Balance

Company Profile

We are the professional distributor of electronic components providing a large variety of products to save you a lot of time, effort and cost with our efficient self-customized service. careful order preparation fast delivery service. Powerful enterprise management system, warehouse management system, strict product quality inspection system and convenient delivery system are suitable for each terminal PC/mobile platform.

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