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APT12F60K

Transistors - FETs, MOSFETs - RF

Manufacturer No:
APT12F60K
Manufacture:
Microsemi Corporation
Datasheet:
APT12F60K
Description:
MOSFET N-CH 600V 12A TO-220

In Stock

0 pcs On sales

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Product Attribute

Microsemi Corporation APT12F60K technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APT12F60K.

Categories
Discrete Semiconductor Products
Manufacturer
Microsemi Corporation
Packaging
Tube/Rail
Status
Active
Polarity
N-Channel
Technology
MOSFET
Drain-Source Breakdown Voltage
600V
Continuous Drain Current at 25°C
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Gate-Source Threshold Voltage
5V @ 500μA
Max Gate Charge
55nC @ 10V
Max Input Capacitance
2200pF @ 25V
Maximum Gate-Source Voltage
±30V
Power Dissipation (Max)
225W (Tc)
Maximum Rds On at Id,Vgs
620 mOhm @ 6A, 10V
Temperature Range - Operating
-55°C to 150°C (TJ)
Mounting
Through Hole
Case / Package
TO-220 [K]
Dimension
TO-220-3
Popularity
Medium
Fake Threat In the Open Market
38 pct.
Supply and Demand Status
Balance

Company Profile

We are the professional distributor of electronic components providing a large variety of products to save you a lot of time, effort and cost with our efficient self-customized service. careful order preparation fast delivery service. Powerful enterprise management system, warehouse management system, strict product quality inspection system and convenient delivery system are suitable for each terminal PC/mobile platform.

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