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APT35GP120B2DQ2G

Name: APT35GP120B2DQ2G
Brand: Microsemi Corporation
Price: 62.88 USD
Rating: 4.8 (6586 reviews)

IGBTs - Single

Manufacturer No:: APT35GP120B2DQ2G
Manufacture:: Microsemi Corporation
Datasheet:: APT35GP120B2DQ2G
Description:: IGBT 1200V 96A 543W TMAX

In Stock

2400 pcs On sales

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Shipping Cost

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Shipping Method

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

Microsemi Corporation APT35GP120B2DQ2G technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APT35GP120B2DQ2G.

Categories: Discrete Semiconductor Products
Manufacturer: Microsemi Corporation
Packaging: Tube/Rail
Status: Active
IGBT Type: PT
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Current Collector: 96A
Pulsed Collector Current: 140A
Collector-emitter saturation voltage(Max): 3.9V @ 15V, 35A
Maximum Power Dissipation: 543W
Total Switching Energy(Ets): 750μJ (on), 680μJ (off)
Input Type: Standard
Gate Charge: 150nC
Turn-on and Turn-off delay time: 16ns/95ns
Testing Conditions: 600V, 35A, 4.3 Ohm, 15V
Temperature Range - Operating: -55°C to 150°C (TJ)
Mounting: Through Hole
Dimension: TO-247-3 Variant
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited
Quantity per package: 1

Company Profile

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