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APT35GP120BG

IGBTs - Single

Manufacturer No:
APT35GP120BG
Manufacture:
Microsemi Corporation
Datasheet:
APT35GP120BG
Description:
POWER MOS 7® IGBT

In Stock

1300 pcs On sales

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Product Attribute

Microsemi Corporation APT35GP120BG technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APT35GP120BG.

Categories
Discrete Semiconductor Products
Manufacturer
Microsemi Corporation
Series
POWER MOS 7
Packaging
Tube
IGBT Type
PT
Voltage - Collector Emitter Breakdown (Maximum)
1200V
Current - Collector (Ic) (Maximum)
96A
Current - Collector Pulsed (Icm)
140A
Vce(on) (Maximum) @ Vge, Ic
3.9V @ 15V, 35A
Power - Max
543W
Switching Energy
750μJ (on), 680μJ (off)
Input Type
Standard
Gate Charge
150nC
Td (on/off) @ 25°C
16ns/94ns
Test Condition
600V, 35A, 5 Ohm, 15V
Operating Temperature Range
-55°C ~ 150°C (TJ)
Mounting Style
Through Hole
Package
TO-247-3
Manufacturer Package
TO-247 [B]
Manufacturer Homepage
www.microsemi.com
Popularity
Medium
Fake Threat In the Open Market
71 pct.
Supply and Demand Status
Limited
Quantity per package
1

Company Profile

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