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APT50GF120B2R

Name: APT50GF120B2R
Brand: Microsemi Corporation
Price: 210.63 USD
Rating: 4.8 (6586 reviews)

IGBTs - Single

Manufacturer No:: APT50GF120B2R
Manufacture:: Microsemi Corporation
Datasheet:: APT50GF120B2R
Description:: IGBT 1200V 135A 781W TMAX

In Stock

1500 pcs On sales

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Shipping Cost

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Shipping Method

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

Microsemi Corporation APT50GF120B2R technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APT50GF120B2R.

Categories: Discrete Semiconductor Products
Manufacturer: Microsemi Corporation
Packaging: Tube/Rail
Status: Active
IGBT Type: NPT
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Current Collector: 135A
Pulsed Collector Current: 150A
Collector-emitter saturation voltage(Max): 3V @ 15V, 50A
Maximum Power Dissipation: 781W
Total Switching Energy(Ets): 3.6mJ (on), 2.64mJ (off)
Input Type: Standard
Gate Charge: 340nC
Turn-on and Turn-off delay time: 25ns/260ns
Testing Conditions: 800V, 50A, 1 Ohm, 15V
Temperature Range - Operating: -55°C to 150°C (TJ)
Mounting: Through Hole
Dimension: TO-247-3 Variant
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Limited

Company Profile

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