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APT50GF120B2R

IGBTs - Single

Manufacturer No:
APT50GF120B2R
Manufacture:
Microsemi Corporation
Datasheet:
APT50GF120B2R
Description:
IGBT 1200V 135A 781W TMAX

In Stock

1500 pcs On sales

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Product Attribute

Microsemi Corporation APT50GF120B2R technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APT50GF120B2R.

Categories
Discrete Semiconductor Products
Manufacturer
Microsemi Corporation
Packaging
Tube/Rail
Status
Active
IGBT Type
NPT
VCEO Maximum Collector-Emitter Breakdown Voltage
1200V
Maximum Current Collector
135A
Pulsed Collector Current
150A
Collector-emitter saturation voltage(Max)
3V @ 15V, 50A
Maximum Power Dissipation
781W
Total Switching Energy(Ets)
3.6mJ (on), 2.64mJ (off)
Input Type
Standard
Gate Charge
340nC
Turn-on and Turn-off delay time
25ns/260ns
Testing Conditions
800V, 50A, 1 Ohm, 15V
Temperature Range - Operating
-55°C to 150°C (TJ)
Mounting
Through Hole
Dimension
TO-247-3 Variant
Popularity
Medium
Fake Threat In the Open Market
44 pct.
Supply and Demand Status
Limited

Company Profile

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