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APT50GS60BRDQ2G

IGBTs - Single

Manufacturer No:
APT50GS60BRDQ2G
Manufacture:
Microsemi Corporation
Datasheet:
APT50GS60BRDQ2G
Description:
Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode

In Stock

7900 pcs On sales

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Product Attribute

Microsemi Corporation APT50GS60BRDQ2G technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APT50GS60BRDQ2G.

Categories
Discrete Semiconductor Products
Manufacturer
Microsemi Corporation
Series
Thunderbolt IGBT
Packaging
Tube
IGBT Type
NPT
Voltage - Collector Emitter Breakdown (Maximum)
600V
Current - Collector (Ic) (Maximum)
93A
Current - Collector Pulsed (Icm)
195A
Vce(on) (Maximum) @ Vge, Ic
3.15V @ 15V, 50A
Power - Max
415W
Switching Energy
755μJ (off)
Input Type
Standard
Gate Charge
235nC
Td (on/off) @ 25°C
16ns/225ns
Test Condition
400V, 40A, 4.7 Ohm, 15V
Reverse Recovery Time (trr)
25ns
Operating Temperature Range
-55°C ~ 150°C (TJ)
Mounting Style
Through Hole
Package
TO-247-3
Manufacturer Package
TO-247 [B]
Manufacturer Homepage
www.microsemi.com
Popularity
Medium
Fake Threat In the Open Market
45 pct.
Supply and Demand Status
Limited
Family Name
APT50GS60BRDQ2
Introduction Date
July 15, 2007
ECCN
EAR99
Estimated EOL Date
2026

Company Profile

We are the professional distributor of electronic components providing a large variety of products to save you a lot of time, effort and cost with our efficient self-customized service. careful order preparation fast delivery service. Powerful enterprise management system, warehouse management system, strict product quality inspection system and convenient delivery system are suitable for each terminal PC/mobile platform.

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