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PBSS5330PA,135

RF Transistors (BJT)

Manufacturer No:
PBSS5330PA,135
Manufacture:
Nexperia USA Inc.
Package:
3-PowerUDFN
Datasheet:
PBSS5330PA,135
Description:
PBSS5330PA - 30 V, 3 A PNP LOW V / Bipolar (BJT) Transistor PNP 30 V 3 A 165MHz 500 mW Surface Mount 3-HUSON (2x2)

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Product Attribute

Nexperia USA Inc. PBSS5330PA,135 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PBSS5330PA,135.

Category
Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr
Nexperia USA Inc.
Package
Bulk
Transistor Type
PNP
Current - Collector (Ic) (Max)
3 A
Voltage - Collector Emitter Breakdown (Max)
30 V
Vce Saturation (Max) @ Ib, Ic
320mV @ 300mA, 3A
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 3A, 2V
Power - Max
500 mW
Frequency - Transition
165MHz
Temperature Range - Operating
150°C (TJ)
Mounting
SMD (SMT)
Package / Case
3-PowerUDFN
Supplier Device Package
3-HUSON (2x2)
MSL Level
Vendor Undefined
REACH Status
REACH Unaffected
Other Names
2156-PBSS5330PA,135-1727
Standard Package
1
Fake Threat In the Open Market
85 pct.

Company Profile

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