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PDTA114YMB,315

RF Transistors (BJT)

Manufacturer No:
PDTA114YMB,315
Manufacture:
Nexperia USA Inc.
Datasheet:
PDTA114YMB,315
Description:
PDTA114YMB - PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ

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Product Attribute

Nexperia USA Inc. PDTA114YMB,315 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PDTA114YMB,315.

Supply and Demand Status
Shortage
Fake Threat In the Open Market
71 pct.
Popularity
Low
Manufacturer
Nexperia USA Inc.
Categories
RF Transistors(BJT)
Transition Frequency
180 MHz
RoHS
Compliant
Radiation Hardening
No
Packaging
Tape & Reel (TR)
Number of Pins
3
Mount
Surface Mount
Min Operating Temperature
-65 °C
Max Power Dissipation
250 mW
Maximum Operating Temperature
150 °C
Max Collector Current
100 mA
Element Configuration
Single
Collector Emitter Voltage (VCEO)
100 mV
Collector Emitter Breakdown Voltage
50 V
Case / Package
DFN
Mounting
SMD (SMT)

Company Profile

We are the professional distributor of electronic components providing a large variety of products to save you a lot of time, effort and cost with our efficient self-customized service. careful order preparation fast delivery service. Powerful enterprise management system, warehouse management system, strict product quality inspection system and convenient delivery system are suitable for each terminal PC/mobile platform.

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