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PDTC124ET,215

RF Transistors (BJT)

Manufacturer No:
PDTC124ET,215
Manufacture:
Nexperia USA Inc.
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
PDTC124ET,215
Description:
TRANS PREBIAS NPN 250MW TO236AB / Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 mW Surface Mount TO-236AB

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Product Attribute

Nexperia USA Inc. PDTC124ET,215 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PDTC124ET,215.

Category
Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Mfr
Nexperia USA Inc.
Package
Tape & Reel
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
22 kOhms
Resistor - Emitter Base (R2)
22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic
150mV @ 500µA, 10mA
Current - Collector Cutoff (Max)
1µA
Power - Max
250 mW
Mounting
SMD (SMT)
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
TO-236AB
Base Product Number
PDTC124
MSL Level
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
568-6433-1,568-6433-1-ND,568-6433-2,568-6433-6,568-6433-2-ND,568-6433-6-ND,PDTC124ET215,PDTC124ET,215-ND,934031020215,1727-5135-6,PDTC124ET T/R-ND,1727-5135-2,1727-5135-1,PDTC124ET T/R
Standard Package
3,000
Fake Threat In the Open Market
85 pct.

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