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PHD9NQ20T,118

Transistors - FETs, MOSFETs - RF

Manufacturer No:
PHD9NQ20T,118
Manufacture:
Nexperia USA Inc.
Datasheet:
PHD9NQ20T,118
Description:
MOSFET N-CH 200V 8.7A DPAK

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0 pcs On sales

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Product Attribute

Nexperia USA Inc. PHD9NQ20T,118 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PHD9NQ20T,118.

Categories
Discrete Semiconductor Products
Manufacturer
Nexperia USA Inc.
Packaging
Reel - TR
Status
Active
Polarity
N-Channel
Technology
MOSFET
Drain-Source Breakdown Voltage
200V
Continuous Drain Current at 25°C
8.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Gate-Source Threshold Voltage
4V @ 1mA
Max Gate Charge
24nC @ 10V
Max Input Capacitance
959pF @ 25V
Maximum Gate-Source Voltage
±30V
Power Dissipation (Max)
88W (Tc)
Maximum Rds On at Id,Vgs
400 mOhm @ 4.5A, 10V
Temperature Range - Operating
-55°C to 175°C (TJ)
Mounting
SMD (SMT)
Case / Package
DPAK
Dimension
TO-252-3, DPak (2 Leads + Tab), SC-63
Popularity
Medium
Fake Threat In the Open Market
40 pct.
Supply and Demand Status
Balance

Company Profile

We are the professional distributor of electronic components providing a large variety of products to save you a lot of time, effort and cost with our efficient self-customized service. careful order preparation fast delivery service. Powerful enterprise management system, warehouse management system, strict product quality inspection system and convenient delivery system are suitable for each terminal PC/mobile platform.

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