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2N5551,116

Name: 2N5551,116
Brand: NXP
Price: 1.5 USD
Rating: 4.8 (6586 reviews)

RF Transistors (BJT)

Manufacturer No:: 2N5551,116
Manufacture:: NXP
Package:: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Datasheet:: 2N5551,116
Description:: TRANS NPN 160V 0.3A TO92-3 / Bipolar (BJT) Transistor NPN 160 V 300 mA 300MHz 630 mW Through Hole TO-92-3

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Product Attribute

NXP 2N5551,116 technical specifications, attributes, parameters and parts with similar specifications to NXP 2N5551,116.

Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr: NXP USA Inc.
Package: Tape & Reel (TR)
Product Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Power - Max: 630 mW
Frequency - Transition: 300MHz
Temperature Range - Operating: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package: TO-92-3
Base Product Number: 2N55
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
ECCN: EAR99
HTSUS: 8541.21.0075
Other Names: 2N5551 T/R-ND,2N5551 T/R,933215530116
Standard Package: 2,000
Fake Threat In the Open Market: 75 pct.

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