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BCW32,215

RF Transistors (BJT)

Manufacturer No:
BCW32,215
Manufacture:
NXP
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
BCW32,215
Description:
NEXPERIA BCW32 - SMALL SIGNAL BI / Bipolar (BJT) Transistor NPN 32 V 100 mA 100MHz 250 mW Surface Mount TO-236AB

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Product Attribute

NXP BCW32,215 technical specifications, attributes, parameters and parts with similar specifications to NXP BCW32,215.

Category
Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr
NXP Semiconductors
Series
Automotive, AEC-Q101
Package
Bulk
Transistor Type
NPN
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
32 V
Vce Saturation (Max) @ Ib, Ic
210mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2mA, 5V
Power - Max
250 mW
Frequency - Transition
100MHz
Temperature Range - Operating
150°C (TJ)
Mounting
SMD (SMT)
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
TO-236AB
MSL Level
1 (Unlimited)
REACH Status
REACH Unaffected
Other Names
2156-BCW32,215-954
Standard Package
1
Fake Threat In the Open Market
67 pct.

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