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BST16,115

RF Transistors (BJT)

Manufacturer No:
BST16,115
Manufacture:
NXP
Package:
TO-243AA
Datasheet:
BST16,115
Description:
TRANS PNP 300V 0.2A SOT89-3 / Bipolar (BJT) Transistor PNP 300 V 200 mA 15MHz 1.3 W Surface Mount SOT-89-3

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Product Attribute

NXP BST16,115 technical specifications, attributes, parameters and parts with similar specifications to NXP BST16,115.

Category
Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr
NXP USA Inc.
Package
Tape & Reel (TR)
Product Status
Obsolete
Transistor Type
PNP
Current - Collector (Ic) (Max)
200 mA
Voltage - Collector Emitter Breakdown (Max)
300 V
Vce Saturation (Max) @ Ib, Ic
750mV @ 5mA, 50mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 50mA, 10V
Power - Max
1.3 W
Frequency - Transition
15MHz
Temperature Range - Operating
150°C (TJ)
Mounting
SMD (SMT)
Package / Case
TO-243AA
Supplier Device Package
SOT-89-3
Base Product Number
BST1
MSL Level
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
BST16 T/R,BST16 T/R-ND,933516280115
Standard Package
1,000
Fake Threat In the Open Market
70 pct.

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