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BUJ303B,127

RF Transistors (BJT)

Manufacturer No:
BUJ303B,127
Manufacture:
NXP
Package:
TO-220-3
Datasheet:
BUJ303B,127
Description:
NOW WEEN - BUJ303B - POWER BIPOL / Bipolar (BJT) Transistor NPN 400 V 5 A 100 W Through Hole TO-220AB

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Product Attribute

NXP BUJ303B,127 technical specifications, attributes, parameters and parts with similar specifications to NXP BUJ303B,127.

Category
Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr
NXP USA Inc.
Package
Bulk
Transistor Type
NPN
Current - Collector (Ic) (Max)
5 A
Voltage - Collector Emitter Breakdown (Max)
400 V
Vce Saturation (Max) @ Ib, Ic
1.5V @ 1A, 3A
Current - Collector Cutoff (Max)
100µA
DC Current Gain (hFE) (Min) @ Ic, Vce
23 @ 800mA, 3V
Power - Max
100 W
Temperature Range - Operating
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220AB
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-BUJ303B,127,WENNXPBUJ303B,127
Standard Package
1
Fake Threat In the Open Market
81 pct.

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