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PBSS5160PAP,115

RF Transistors (BJT)

Manufacturer No:
PBSS5160PAP,115
Manufacture:
NXP
Package:
6-UFDFN Exposed Pad
Datasheet:
PBSS5160PAP,115
Description:
PBSS5160PAP - 60 V, 1 A PNP/PNP / Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 1A 125MHz 510mW Surface Mount 6-HUSON (2x2)

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Product Attribute

NXP PBSS5160PAP,115 technical specifications, attributes, parameters and parts with similar specifications to NXP PBSS5160PAP,115.

Category
Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays
Mfr
NXP Semiconductors
Package
Bulk
Transistor Type
2 PNP (Dual)
Current - Collector (Ic) (Max)
1A
Voltage - Collector Emitter Breakdown (Max)
60V
Vce Saturation (Max) @ Ib, Ic
340mV @ 100mA, 1A
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 500mA, 2V
Power - Max
510mW
Frequency - Transition
125MHz
Temperature Range - Operating
150°C (TJ)
Mounting
SMD (SMT)
Package / Case
6-UFDFN Exposed Pad
Supplier Device Package
6-HUSON (2x2)
HTSUS
0000.00.0000
Other Names
2156-PBSS5160PAP,115-NEX,NEXNXPPBSS5160PAP,115
Standard Package
1
Fake Threat In the Open Market
77 pct.

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