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PDTA123YM,315

RF Transistors (BJT)

Manufacturer No:
PDTA123YM,315
Manufacture:
NXP
Package:
SC-101, SOT-883
Datasheet:
PDTA123YM,315
Description:
NOW NEXPERIA PDTA123YM - SMALL S / Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 250 mW Surface Mount DFN1006-3

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Product Attribute

NXP PDTA123YM,315 technical specifications, attributes, parameters and parts with similar specifications to NXP PDTA123YM,315.

Category
Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Mfr
NXP Semiconductors
Package
Bulk
Transistor Type
PNP - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
2.2 kOhms
Resistor - Emitter Base (R2)
10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
35 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic
150mV @ 500µA, 10mA
Current - Collector Cutoff (Max)
1µA
Power - Max
250 mW
Mounting
SMD (SMT)
Package / Case
SC-101, SOT-883
Supplier Device Package
DFN1006-3
HTSUS
0000.00.0000
Other Names
NEXNEXPDTA123YM,315,2156-PDTA123YM,315
Standard Package
1
Fake Threat In the Open Market
66 pct.

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