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PDTC123YE,115

RF Transistors (BJT)

Manufacturer No:
PDTC123YE,115
Manufacture:
NXP
Package:
SC-75, SOT-416
Datasheet:
PDTC123YE,115
Description:
TRANS PREBIAS NPN 150MW SC75 / Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 150 mW Surface Mount SC-75

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Product Attribute

NXP PDTC123YE,115 technical specifications, attributes, parameters and parts with similar specifications to NXP PDTC123YE,115.

Category
Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Mfr
NXP USA Inc.
Package
Tape & Reel (TR)
Product Status
Obsolete
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
2.2 kOhms
Resistor - Emitter Base (R2)
10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
35 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic
150mV @ 500µA, 10mA
Current - Collector Cutoff (Max)
1µA
Power - Max
150 mW
Mounting
SMD (SMT)
Package / Case
SC-75, SOT-416
Supplier Device Package
SC-75
Base Product Number
PDTC12
MSL Level
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
PDTC123YE T/R,PDTC123YE T/R-ND,2156-PDTC123YE115-NXTR,934058807115,NEXNXPPDTC123YE,115
Standard Package
3,000
Fake Threat In the Open Market
74 pct.

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