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PEMD14,115

RF Transistors (BJT)

Manufacturer No:
PEMD14,115
Manufacture:
NXP
Package:
SOT-563, SOT-666
Datasheet:
PEMD14,115
Description:
NOW NEXPERIA PEMD14 - SMALL SIGN / Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount SOT-666

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Product Attribute

NXP PEMD14,115 technical specifications, attributes, parameters and parts with similar specifications to NXP PEMD14,115.

Category
Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Mfr
NXP USA Inc.
Package
Bulk
Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1)
47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic
150mV @ 500µA, 10mA
Current - Collector Cutoff (Max)
1µA
Power - Max
300mW
Mounting
SMD (SMT)
Package / Case
SOT-563, SOT-666
Supplier Device Package
SOT-666
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
NEXNXPPEMD14,115,2156-PEMD14,115
Standard Package
1
Fake Threat In the Open Market
74 pct.

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