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PEMH4

Transistors (BJT) - Arrays, Pre - Biased

Manufacturer No:
PEMH4
Manufacture:
NXP
Datasheet:
PEMH4
Description:
TRANS 2NPN PREBIAS 0.3W SOT666

In Stock

8000 pcs On sales

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Delivery Time
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Product Attribute

NXP PEMH4 technical specifications, attributes, parameters and parts with similar specifications to NXP PEMH4.

Categories
Discrete Semiconductor Products
Manufacturer
Nexperia USA Inc.
Packaging
Reel - TR
Status
Active
Transistor Polarity
2 NPN - Pre-Biased (Dual)
Maximum Current Collector
100mA
VCEO Maximum Collector-Emitter Breakdown Voltage
50V
Resistor - Base (R1) (Ohms)
10k
Typical Gain (hFE) (Min)
200 @ 1mA, 5V
Max Vce (sat)
150mV @ 500μA, 10mA
Collector Cut-off Current(Max)
1μA
Maximum Power Dissipation
300mW
Mounting
SMD (SMT)
Case / Package
SOT-666
Popularity
Medium
Fake Threat In the Open Market
38 pct.
Supply and Demand Status
Balance
Application Field
Used in Industrial, Power Management, Automotive

Company Profile

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PEMH4 Relevant information

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PEMH10
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NPN resistor-equipped transistors; R1 = 2.2 kohm, R2 = 47 kohm

PEMH10,115
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TRANS 2NPN PREBIAS 0.3W SOT666

PEMH11
PEMH11

NPN resistor-equipped transistors; R1 = 10 kohm, R2 = 10 kohm

PEMH11,115
PEMH11,115

Trans Digital BJT NPN 50V 100mA 300mW Automotive 6-Pin SOT-666 T/R / TRANS 2NPN PREBIAS 0.3W SOT666

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PEMH11,315

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