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PHE13009/DG,127

OEM Parts (O - R)

Manufacturer No:
PHE13009/DG,127
Manufacture:
NXP
Package:
TO-220-3
Datasheet:
PHE13009/DG,127
Description:
NOW WEEN - PHE13009 - POWER BIPO / Bipolar (BJT) Transistor NPN 400 V 12 A 80 W Through Hole TO-220AB

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Product Attribute

NXP PHE13009/DG,127 technical specifications, attributes, parameters and parts with similar specifications to NXP PHE13009/DG,127.

Category
Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr
NXP USA Inc.
Package
Bulk
Transistor Type
NPN
Current - Collector (Ic) (Max)
12 A
Voltage - Collector Emitter Breakdown (Max)
400 V
Vce Saturation (Max) @ Ib, Ic
2V @ 1.6A, 8A
Current - Collector Cutoff (Max)
100µA
DC Current Gain (hFE) (Min) @ Ic, Vce
8 @ 5A, 5V
Power - Max
80 W
Temperature Range - Operating
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220AB
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
WENNXPPHE13009/DG,127,2156-PHE13009/DG,127
Standard Package
1
Fake Threat In the Open Market
62 pct.

Company Profile

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