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2N5401CYTA

RF Transistors (BJT)

Manufacturer No:
2N5401CYTA
Manufacture:
ON Semiconductor
Package:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Datasheet:
2N5401CYTA
Description:
TRANS PNP 150V 0.6A TO92-3 / Bipolar (BJT) Transistor PNP 150 V 600 mA 400MHz 625 mW Through Hole TO-92-3

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Product Attribute

ON Semiconductor 2N5401CYTA technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N5401CYTA.

Category
Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr
onsemi
Package
Tape & Box (TB)
Product Status
Obsolete
Transistor Type
PNP
Current - Collector (Ic) (Max)
600 mA
Voltage - Collector Emitter Breakdown (Max)
150 V
Vce Saturation (Max) @ Ib, Ic
500mV @ 5mA, 50mA
Current - Collector Cutoff (Max)
50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 10mA, 5V
Power - Max
625 mW
Frequency - Transition
400MHz
Temperature Range - Operating
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package
TO-92-3
Base Product Number
2N5401
MSL Level
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0075
Standard Package
2,000
Fake Threat In the Open Market
73 pct.

Company Profile

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