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BD809G

RF Transistors (BJT)

Manufacturer No:
BD809G
Manufacture:
ON Semiconductor
Package:
TO-220-3
Datasheet:
BD809G
Description:
TRANS NPN 80V 10A TO220 / Bipolar (BJT) Transistor NPN 80 V 10 A 1.5MHz 90 W Through Hole TO-220

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Shipping Method
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Delivery Time
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

ON Semiconductor BD809G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BD809G.

Category
Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr
onsemi
Package
Tube
Product Status
Obsolete
Transistor Type
NPN
Current - Collector (Ic) (Max)
10 A
Voltage - Collector Emitter Breakdown (Max)
80 V
Vce Saturation (Max) @ Ib, Ic
1.1V @ 300mA, 3A
Current - Collector Cutoff (Max)
1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
15 @ 4A, 2V
Power - Max
90 W
Frequency - Transition
1.5MHz
Temperature Range - Operating
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220
Base Product Number
BD809
MSL Level
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
BD809G-ND,BD809GOS,2156-BD809G-OS,ONSONSBD809G
Standard Package
50
Fake Threat In the Open Market
49 pct.

Company Profile

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