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MUN5313DW1T1G

Transistors (BJT) - Arrays, Pre - Biased

Manufacturer No:
MUN5313DW1T1G
Manufacture:
ON Semiconductor
Datasheet:
MUN5313DW1T1G
Description:
TRANS PREBIAS NPN/PNP SOT363 / Trans Digital BJT NPN/PNP 50V 100mA 385mW 6-Pin SC-88 T/R

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18000 pcs On sales

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Product Attribute

ON Semiconductor MUN5313DW1T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MUN5313DW1T1G.

Categories
Discrete Semiconductor Products
Manufacturer
ON Semiconductor
Packaging
Reel - TR
Status
Active
Transistor Polarity
1 NPN, 1 PNP - Pre-Biased (Dual)
Maximum Current Collector
100mA
VCEO Maximum Collector-Emitter Breakdown Voltage
50V
Resistor - Base (R1) (Ohms)
47k
Resistor - Emitter Base (R2) (Ohms)
22k
Typical Gain (hFE) (Min)
80 @ 5mA, 10V
Max Vce (sat)
250mV @ 300μA, 10mA
Collector Cut-off Current(Max)
500nA
Maximum Power Dissipation
250mW
Mounting
SMD (SMT)
Case / Package
SC-88/SC70-6/SOT-363
Is this a common-used part?
Yes
Popularity
High
Fake Threat In the Open Market
33 pct.
Supply and Demand Status
Balance
Family Name
MUN5313DW1
Introduction Date
December 02, 1997
ECCN
EAR99
Country of Origin
China
Halogen Free
Compliant
Estimated EOL Date
2029

Company Profile

We are the professional distributor of electronic components providing a large variety of products to save you a lot of time, effort and cost with our efficient self-customized service. careful order preparation fast delivery service. Powerful enterprise management system, warehouse management system, strict product quality inspection system and convenient delivery system are suitable for each terminal PC/mobile platform.

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