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NCV1413BDR2G

Transistors (BJT) - Arrays

Manufacturer No:
NCV1413BDR2G
Manufacture:
ON Semiconductor
Datasheet:
NCV1413BDR2G
Description:
TRANS 7NPN DARL 50V 0.5A 16SO

In Stock

50000 pcs On sales

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Product Attribute

ON Semiconductor NCV1413BDR2G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NCV1413BDR2G.

Categories
Discrete Semiconductor Products
Manufacturer
ON Semiconductor
Packaging
Reel - TR
Status
Active
Transistor Polarity
7 NPN Darlington
Maximum Current Collector
500mA
VCEO Maximum Collector-Emitter Breakdown Voltage
50V
Max Vce (sat)
1.6V @ 500μA, 350mA
Typical Gain (hFE) (Min)
1000 @ 350mA, 2V
Temperature Range - Operating
150°C (TJ)
Mounting
SMD (SMT)
Case / Package
16-SOIC
Is this a common-used part?
Yes
Popularity
High
Fake Threat In the Open Market
58 pct.
Supply and Demand Status
Sufficient

Company Profile

We are the professional distributor of electronic components providing a large variety of products to save you a lot of time, effort and cost with our efficient self-customized service. careful order preparation fast delivery service. Powerful enterprise management system, warehouse management system, strict product quality inspection system and convenient delivery system are suitable for each terminal PC/mobile platform.

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