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NSBC124EDXV6T1G

Transistors (BJT) - Arrays, Pre - Biased

Manufacturer No:
NSBC124EDXV6T1G
Manufacture:
ON Semiconductor
Datasheet:
NSBC124EDXV6T1G
Description:
Dual NPN Bias Resistor Transistors R1 = 22 k, R2 = 22 k

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20000 pcs On sales

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Product Attribute

ON Semiconductor NSBC124EDXV6T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NSBC124EDXV6T1G.

Categories
Discrete Semiconductor Products
Manufacturer
ON Semiconductor
Packaging
Reel - TR
Transistor Type
2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Maximum)
100mA
Voltage - Collector Emitter Breakdown (Maximum)
50V
Resistor - Base (R1) (Ohms)
22k
Resistor - Emitter Base (R2) (Ohms)
22k
DC Current Gain (hFE) (Minimum) @ Ic, Vce
60 @ 5mA, 10V
Vce Saturation (Maximum) @ Ib, Ic
250mV @ 300μA, 10mA
Current - Collector Cutoff (Maximum)
500nA
Power - Max
500mW
Mounting
SMD
Package
SOT-563, SOT-666
Manufacturer Package
SOT-563
Manufacturer Homepage
www.onsemi.com
Family Name
NSBC124EDXV6
Introduction Date
March 13, 2003
ECCN
EAR99
Country of Origin
China
Halogen Free
Compliant
Estimated EOL Date
2026
Popularity
Medium
Fake Threat In the Open Market
67 pct.
Supply and Demand Status
Balance

Company Profile

We are the professional distributor of electronic components providing a large variety of products to save you a lot of time, effort and cost with our efficient self-customized service. careful order preparation fast delivery service. Powerful enterprise management system, warehouse management system, strict product quality inspection system and convenient delivery system are suitable for each terminal PC/mobile platform.

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