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NSS1C200MZ4T3G

RF Transistors (BJT)

Manufacturer No:
NSS1C200MZ4T3G
Manufacture:
ON Semiconductor
Package:
TO-261-4, TO-261AA
Datasheet:
NSS1C200MZ4T3G
Description:
TRANS PNP 100V 2A SOT223 / Bipolar (BJT) Transistor PNP 100 V 2 A 120MHz 800 mW Surface Mount SOT-223 (TO-261)

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Product Attribute

ON Semiconductor NSS1C200MZ4T3G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NSS1C200MZ4T3G.

Category
Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr
onsemi
Package
Bulk
Transistor Type
PNP
Current - Collector (Ic) (Max)
2 A
Voltage - Collector Emitter Breakdown (Max)
100 V
Vce Saturation (Max) @ Ib, Ic
220mV @ 200mA, 2A
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 500mA, 2V
Power - Max
800 mW
Frequency - Transition
120MHz
Temperature Range - Operating
-55°C ~ 150°C (TJ)
Mounting
SMD (SMT)
Package / Case
TO-261-4, TO-261AA
Supplier Device Package
SOT-223 (TO-261)
MSL Level
Vendor Undefined
REACH Status
REACH Affected
Other Names
2156-NSS1C200MZ4T3G-488
Standard Package
1
Fake Threat In the Open Market
84 pct.

Company Profile

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