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NSVMMUN2112LT1G

Name: NSVMMUN2112LT1G
Brand: ON Semiconductor
Price: 1.5 USD
Rating: 4.8 (6586 reviews)

RF Transistors (BJT)

Manufacturer No:: NSVMMUN2112LT1G
Manufacture:: ON Semiconductor
Package:: TO-236-3, SC-59, SOT-23-3
Datasheet:: NSVMMUN2112LT1G
Description:: TRANS PREBIAS PNP 0.246W SOT23 / Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236)

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Product Attribute

ON Semiconductor NSVMMUN2112LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NSVMMUN2112LT1G.

Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Mfr: onsemi
Package: Tape & Reel
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Power - Max: 246 mW
Mounting: SMD (SMT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Base Product Number: NSVMMUN2112
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
ECCN: EAR99
HTSUS: 8541.21.0095
Other Names: NSVMMUN2112LT1GOSTR,NSVMMUN2112LT1G-ND,NSVMMUN2112LT1GOSCT,NSVMMUN2112LT1GOSDKR
Standard Package: 3,000
Fake Threat In the Open Market: 85 pct.

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