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NSVMMUN2232LT1G

Transistors (BJT) - Single, Pre - Biased

Manufacturer No:
NSVMMUN2232LT1G
Manufacture:
ON Semiconductor
Datasheet:
NSVMMUN2232LT1G
Description:
TRANS PREBIAS NPN 246MW SOT23-3 / Digital Transistors (BRT) R1 = 4.7 k, R2 = 4.7 k

In Stock

32500 pcs On sales

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Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

ON Semiconductor NSVMMUN2232LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NSVMMUN2232LT1G.

Manufacturer
ON Semiconductor
Packaging
Reel
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Maximum)
100mA
Voltage - Collector Emitter Breakdown (Maximum)
50V
Resistor - Base (R1)
4.7 kOhms
Resistor - Emitter Base (R2)
4.7 kOhms
DC Current Gain (hFE) (Min) at Ic, Vce
15 at 5mA, 10V
Vce Saturation (Maximum) at Ib, Ic
250mV at 1mA, 10mA
Current - Collector Cutoff (Maximum)
500nA
Power - Max
246mW
Mounting Style
SMD
Manufacturer Package
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SOT-23-3 (TO-236)
Part Number Series
MMUN22**L
Manufacturer Pack Quantity
3,000
MSL Level
1 (Unlimited)
Popularity
High
Fake Threat In the Open Market
62 pct.
Supply and Demand Status
Sufficient

Company Profile

We are the professional distributor of electronic components providing a large variety of products to save you a lot of time, effort and cost with our efficient self-customized service. careful order preparation fast delivery service. Powerful enterprise management system, warehouse management system, strict product quality inspection system and convenient delivery system are suitable for each terminal PC/mobile platform.

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