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NSVMUN5111DW1T3G

RF Transistors (BJT)

Manufacturer No:
NSVMUN5111DW1T3G
Manufacture:
ON Semiconductor
Package:
6-TSSOP, SC-88, SOT-363
Datasheet:
NSVMUN5111DW1T3G
Description:
TRANS PREBIAS 2PNP 50V SC88 / Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363

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Product Attribute

ON Semiconductor NSVMUN5111DW1T3G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NSVMUN5111DW1T3G.

Category
Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Mfr
onsemi
Series
Automotive, AEC-Q101
Package
Tape & Reel
Transistor Type
2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1)
10kOhms
Resistor - Emitter Base (R2)
10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)
500nA
Power - Max
250mW
Mounting
SMD (SMT)
Package / Case
6-TSSOP, SC-88, SOT-363
Supplier Device Package
SC-88/SC70-6/SOT-363
Base Product Number
NSVMUN5111
MSL Level
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
2156-NSVMUN5111DW1T3G-OS,488-NSVMUN5111DW1T3GCT,ONSONSNSVMUN5111DW1T3G,488-NSVMUN5111DW1T3GTR,488-NSVMUN5111DW1T3GDKR,NSVMUN5111DW1T3G-ND
Standard Package
10,000
Fake Threat In the Open Market
63 pct.

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