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NSVMUN5333DW1T1G

Transistors (BJT) - Arrays, Pre - Biased

Manufacturer No:
NSVMUN5333DW1T1G
Manufacture:
ON Semiconductor
Datasheet:
NSVMUN5333DW1T1G
Description:
TRANS PREBIAS NPN/PNP SOT363

In Stock

63500 pcs On sales

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Product Attribute

ON Semiconductor NSVMUN5333DW1T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NSVMUN5333DW1T1G.

Categories
Discrete Semiconductor Products
Manufacturer
ON Semiconductor
Packaging
Reel - TR
Status
Active
Transistor Polarity
1 NPN, 1 PNP - Pre-Biased (Dual)
Maximum Current Collector
100mA
VCEO Maximum Collector-Emitter Breakdown Voltage
50V
Resistor - Base (R1) (Ohms)
4.7k
Resistor - Emitter Base (R2) (Ohms)
47k
Typical Gain (hFE) (Min)
80 @ 5mA, 10V
Max Vce (sat)
250mV @ 1mA, 10mA
Collector Cut-off Current(Max)
500nA
Maximum Power Dissipation
250mW
Mounting
SMD (SMT)
Case / Package
SC-88/SC70-6/SOT-363
Popularity
Medium
Fake Threat In the Open Market
68 pct.
Supply and Demand Status
Sufficient

Company Profile

We are the professional distributor of electronic components providing a large variety of products to save you a lot of time, effort and cost with our efficient self-customized service. careful order preparation fast delivery service. Powerful enterprise management system, warehouse management system, strict product quality inspection system and convenient delivery system are suitable for each terminal PC/mobile platform.

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