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PN2907ATF

RF Transistors (BJT)

Manufacturer No:
PN2907ATF
Manufacture:
ON Semiconductor
Package:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Datasheet:
PN2907ATF
Description:
TRANS PNP 60V 0.8A TO92-3 / Bipolar (BJT) Transistor PNP 60 V 800 mA 200MHz 625 mW Through Hole TO-92-3

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Product Attribute

ON Semiconductor PN2907ATF technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor PN2907ATF.

Category
Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr
onsemi
Package
Tape & Reel (TR),Cut Tape (CT)
Transistor Type
PNP
Current - Collector (Ic) (Max)
800 mA
Voltage - Collector Emitter Breakdown (Max)
60 V
Vce Saturation (Max) @ Ib, Ic
1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max)
20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA, 10V
Power - Max
625 mW
Frequency - Transition
200MHz
Temperature Range - Operating
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package
TO-92-3
Base Product Number
PN2907
MSL Level
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0075
Other Names
2156-PN2907ATF-OS,PN2907ATFCT,PN2907ATFTR,PN2907ATF-ND
Standard Package
2,000
Fake Threat In the Open Market
71 pct.

Company Profile

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