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SBC847BPDW1T1G

Transistors (BJT) - Arrays

Manufacturer No:
SBC847BPDW1T1G
Manufacture:
ON Semiconductor
Datasheet:
SBC847BPDW1T1G
Description:
Dual General Purpose Transistors

In Stock

3840 pcs On sales

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Delivery Time
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Product Attribute

ON Semiconductor SBC847BPDW1T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor SBC847BPDW1T1G.

Categories
Discrete Semiconductor Products
Manufacturer
ON Semiconductor
Packaging
Reel - TR
Transistor Type
NPN, PNP
Current - Collector (Ic) (Maximum)
100mA
Voltage - Collector Emitter Breakdown (Maximum)
45V
Vce Saturation (Maximum) @ Ib, Ic
600mV @ 5mA, 100mA
Current - Collector Cutoff (Maximum)
15nA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce
200 @ 2mA, 5V
Power - Max
380mW
Frequency - Transition
100MHz
Operating Temperature Range
-55°C ~ 150°C (TJ)
Mounting
SMD
Package
6-TSSOP, SC-88, SOT-363
Manufacturer Package
SC-88/SC70-6/SOT-363
Manufacturer Homepage
www.onsemi.com
Family Name
BC847BPDW1
Introduction Date
February 28, 2000
ECCN
EAR99
Country of Origin
Morocco
Halogen Free
Compliant
Estimated EOL Date
2023
Popularity
Medium
Fake Threat In the Open Market
52 pct.
Supply and Demand Status
Balance

Company Profile

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