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TIP132G

RF Transistors (BJT)

Manufacturer No:
TIP132G
Manufacture:
ON Semiconductor
Package:
TO-220-3
Datasheet:
TIP132G
Description:
TRANS NPN DARL 100V 8A TO220 / Bipolar (BJT) Transistor NPN - Darlington 100 V 8 A 2 W Through Hole TO-220

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Delivery Time
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

ON Semiconductor TIP132G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor TIP132G.

Category
Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr
onsemi
Package
Tube
Product Status
Obsolete
Transistor Type
NPN - Darlington
Current - Collector (Ic) (Max)
8 A
Voltage - Collector Emitter Breakdown (Max)
100 V
Vce Saturation (Max) @ Ib, Ic
3V @ 30mA, 6A
Current - Collector Cutoff (Max)
500µA
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 4A, 4V
Power - Max
2 W
Temperature Range - Operating
-65°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220
Base Product Number
TIP132
MSL Level
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
ONSONSTIP132G,2156-TIP132G-ON
Standard Package
50
Fake Threat In the Open Market
76 pct.

Company Profile

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