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Renesas Electronics America NE3514S02-T1D-A technical specifications, attributes, parameters and parts with similar specifications to Renesas Electronics America NE3514S02-T1D-A.
FET RF 4V 20GHZ MICRO-X
HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
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FET RF 4V 12GHZ M04