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Renesas Electronics America NE5550279A-T1A-A technical specifications, attributes, parameters and parts with similar specifications to Renesas Electronics America NE5550279A-T1A-A.
SILICON POWER MOS FET
4.8 V N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR DCS1800/PCS1900 HANDSETS
POWER, 1A, 20V, N-CHANNEL MOSFET / RF Mosfet N-Channel 4.8 V 400 mA 1.9GHz 32.5dBm SOT-89