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STI57N65M5
- Manufacturer No:
- STI57N65M5
- Manufacture:
- STMicroelectronics
- Datasheet:
- STI57N65M5
- Description:
- N-channel 650 V, 0.056 typ., 42 A MDmesh V Power MOSFET | MOSFET N-CH 650V 42A I2PAK-3
In Stock
5000 pcs On sales
Purchase and inquiry
Purchase
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Means of Payment
For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.RFQ (Request for Quotations)
It is recommended to request for quotations to get the latest prices and inventories about the part. Our sales will reply to your request by email within 24 hours.IMPORTANT NOTICE
1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.
Shipping Cost
Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.) The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.Shipping Method
Currently, our products are shipped through DHL, FedEx, SF, and UPS.Delivery Time
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.Product Attribute
STMicroelectronics STI57N65M5 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STI57N65M5.
- Popularity
- Medium
- Fake Threat In the Open Market
- 48 pct.
- Supply and Demand Status
- Balance
- Manufacturer Homepage
- www.st.com
- MSL Level
- 1 (Unlimited)
- Manufacturer Pack Quantity
- 50
- Manufacturer Package
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Supplier Device Package
- I2PAK (TO-262)
- Mounting Style
- Through Hole
- Temperature Range - Operating
- -55°C ~ 150°C
- Power Dissipation (Maximum)
- 250W
- Input Capacitance (Ciss) (Maximum) at Vds
- 4200pF at 100V
- Gate Source Voltage (Maximum)
- ±25V
- Gate Charge (Qg) (Maximum) at Vgs
- 98nC at 10V
- Gate Source Voltage(th) (Maximum) at Id
- 5V at 250μA
- Rds On (Maximum) at Id, Vgs
- 63mOhm at 21A, 10V
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Id - Continuous Drain Current
- 42A
- Vds - Drain-Source Breakdown Voltage
- 650V
- Technology
- MOSFET
- Transistor Polarity
- N-Channel
- Packaging
- Tube
- Manufacturer
- STMicroelectronics
- Categories
- Discrete Semiconductor Products
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