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TSM60NB260CI C0G

Name: TSM60NB260CI C0G
Brand: Taiwan Semiconductor
Price: 1.5 USD
Rating: 4.8 (6586 reviews)

Custom Parts (S - T)

Manufacturer No:: TSM60NB260CI C0G
Manufacture:: Taiwan Semiconductor
Package:: TO-220-3 Full Pack, Isolated Tab
Datasheet:: TSM60NB260CI C0G
Description:: MOSFET N-CH 600V 13A ITO220AB / N-Channel 600 V 13A (Tc) 32.1W (Tc) Through Hole ITO-220AB

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Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

Taiwan Semiconductor TSM60NB260CI C0G technical specifications, attributes, parameters and parts with similar specifications to Taiwan Semiconductor TSM60NB260CI C0G.

Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr: Taiwan Semiconductor Corporation
Package: Tube
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 260mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1273 pF @ 100 V
Power Dissipation (Max): 32.1W (Tc)
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: ITO-220AB
Package / Case: TO-220-3 Full Pack, Isolated Tab
Base Product Number: TSM60
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
ECCN: EAR99
HTSUS: 8541.29.0095
Other Names: TSM60NB260CIC0G,TSM60NB260CI C0G-ND
Standard Package: 4,000
Fake Threat In the Open Market: 45 pct.

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