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CSD19538Q2T

Name: CSD19538Q2T
Brand: Texas Instruments
Price: 1 USD
Rating: 4.8 (6586 reviews)

Custom Parts (B - D)

Manufacturer No:: CSD19538Q2T
Manufacture:: Texas Instruments
Package:: 6-WDFN Exposed Pad
Datasheet:: CSD19538Q2T
Description:: MOSFET N-CH 100V 13.1A 6WSON / N-Channel 100 V 13.1A (Tc) 2.5W (Ta), 20.2W (Tc) Surface Mount 6-WSON (2x2)

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30287 pcs On sales

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

Texas Instruments CSD19538Q2T technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments CSD19538Q2T.

Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr: Texas Instruments
Series: NexFET™
Package: Tape & Reel
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 13.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 50 V
Power Dissipation (Max): 2.5W (Ta), 20.2W (Tc)
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Mounting: SMD (SMT)
Supplier Device Package: 6-WSON (2x2)
Package / Case: 6-WDFN Exposed Pad
Base Product Number: CSD19538
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
ECCN: EAR99
HTSUS: 8541.29.0095
Other Names: 296-44612-1,296-44612-2,296-44612-6
Standard Package: 250
Fake Threat In the Open Market: 68 pct.

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