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CSD85312Q3E

FETs - Arrays

Manufacturer No:
CSD85312Q3E
Manufacture:
Texas Instruments
Datasheet:
CSD85312Q3E
Description:
MOSFET 2N-CH 20V 39A 8VSON / Dual 20 V N-Channel NexFE Power MOSFETs

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2160 pcs On sales

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Product Attribute

Texas Instruments CSD85312Q3E technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments CSD85312Q3E.

Manufacturer
Texas Instruments
Packaging
Reel
FET Type
2 N-Channel (Dual) Common Source
FET Feature
Logic Level Gate, 5V Drive
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) at 25°C
39A
Rds On (Maximum) at Id, Vgs
12.4mOhm at 10A, 8V
Vgs(th) (Maximum) at Id
1.4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs
15.2nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds
2390pF at 10V
Power - Max
2.5W
Temperature Range - Operating
-55°C ~ 150°C
Mounting Style
SMD
Manufacturer Package
8-PowerVDFN
Supplier Device Package
8-VSON (3.3x3.3)
Manufacturer Pack Quantity
2,500
MSL Level
1 (Unlimited)
Popularity
Medium
Fake Threat In the Open Market
47 pct.
Supply and Demand Status
Balance

Company Profile

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