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2SA1987-O(Q)
- Manufacturer No:
- 2SA1987-O(Q)
- Manufacture:
- Toshiba Semiconductor and Storage
- Package:
- TO-3PL
- Datasheet:
- 2SA1987-O(Q)
- Description:
- TRANS PNP 230V 15A TO3P / Bipolar (BJT) Transistor PNP 230 V 15 A 30MHz 180 W Through Hole TO-3P(L)
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Shipping Cost
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Currently, our products are shipped through DHL, FedEx, SF, and UPS.Delivery Time
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.Product Attribute
Toshiba Semiconductor and Storage 2SA1987-O(Q) technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage 2SA1987-O(Q).
- Category
- Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
- Mfr
- Toshiba Semiconductor and Storage
- Package
- Bulk
- Transistor Type
- PNP
- Current - Collector (Ic) (Max)
- 15 A
- Voltage - Collector Emitter Breakdown (Max)
- 230 V
- Vce Saturation (Max) @ Ib, Ic
- 3V @ 800mA, 8A
- Current - Collector Cutoff (Max)
- 5µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 80 @ 1A, 5V
- Power - Max
- 180 W
- Frequency - Transition
- 30MHz
- Temperature Range - Operating
- 150°C (TJ)
- Mounting Type
- Through Hole
- Package / Case
- TO-3PL
- Supplier Device Package
- TO-3P(L)
- Base Product Number
- 2SA1987
- MSL Level
- Not Applicable
- ECCN
- EAR99
- HTSUS
- 8541.29.0075
- Standard Package
- 100
- Fake Threat In the Open Market
- 52 pct.
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